Discrete Semiconductor Products

BC546B

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BIPOLAR TRANSISTORS - BJT BJT, TO-92, 65V, 100MA, NPN

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Discrete Semiconductor Products

Active

BIPOLAR TRANSISTORS - BJT BJT, TO-92, 65V, 100MA, NPN

Technical Specifications

Parameters and characteristics for this part

Specification	BC546B

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	15 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Frequency - Transition	300 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads, TO-92-3
Package / Case	TO-226AA
Power - Max [Max]	500 mW
Supplier Device Package	TO-92
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	600 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	65 V

Part	Operating Temperature [Max]	Operating Temperature [Min]	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Package / Case	Transistor Type	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Mounting Type
Diotec Semiconductor BC546B	150 °C	-55 °C	500 mW	100 mA	TO-226-3 TO-92-3 TO-92-3 (TO-226AA) Formed Leads	NPN	TO-226AA	65 V	TO-92	600 mV	300 MHz	200	15 nA	Through Hole

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General part information

BIPOLAR TRANSISTORS - BJT BJT, TO-92, 65V, 100MA, NPN

Technical documentation and resources