Discrete Semiconductor Products

IDP30E65D2XKSA1

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INFINEON

THE IDP30E65D2 IS A 650 V SILICON POWER DIODE IN TO-220 REAL2PIN PACKAGE

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Discrete Semiconductor Products

IDP30E65D2XKSA1

Active

INFINEON

THE IDP30E65D2 IS A 650 V SILICON POWER DIODE IN TO-220 REAL2PIN PACKAGE

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IDP30E65D2XKSA1

Current - Average Rectified (Io)	60 A
Current - Reverse Leakage @ Vr	40 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	42 ns
Speed	500 ns, 200 mA
Supplier Device Package	PG-TO220-2-1
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If [Max]	2.2 V

IDP30E65 Series

Part	Voltage - Forward (Vf) (Max) @ If [Max]	Technology	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Mounting Type	Speed	Supplier Device Package	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Current - Average Rectified (Io)	Package / Case
INFINEON IDP30E65D2XKSA1	2.2 V	Standard	42 ns	650 V	40 µA	Through Hole	200 mA 500 ns	PG-TO220-2-1	-40 °C	175 ░C	60 A	TO-220-2

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	172	$ 1.97
	Tube	1	$ 1.78
		50	$ 1.43
		100	$ 1.17
		500	$ 0.99
		1000	$ 0.84
		2000	$ 0.80
		5000	$ 0.77
		10000	$ 0.74
Newark	Each	1	$ 1.97
		10	$ 1.15
		100	$ 1.13
		500	$ 0.88
		1000	$ 0.76
		2500	$ 0.75
		5000	$ 0.71

Description

General part information

IDP30E65 Series

Rapid 2switching 650 V, 30 A emitter controlledpower silicon diodein a TO-220 real2pin package is designed for applications switching between 40 kHz and 100 kHz.

Documents

Technical documentation and resources