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SOT223
Discrete Semiconductor Products

BCP55-10,115

Active
Nexperia USA Inc.

60 V, 1 A NPN MEDIUM POWER TRANSISTORS

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SOT223
Discrete Semiconductor Products

BCP55-10,115

Active
Nexperia USA Inc.

60 V, 1 A NPN MEDIUM POWER TRANSISTORS

Technical Specifications

Parameters and characteristics for this part

SpecificationBCP55-10,115
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]63
Frequency - Transition180 MHz
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTO-261AA, TO-261-4
Power - Max [Max]1.35 W
Supplier Device PackageSOT-223
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 1251$ 0.47

Description

General part information

BCP55-10 Series

NPN medium power transistor series in a small SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.