
Discrete Semiconductor Products
BCP55-10,115
ActiveNexperia USA Inc.
60 V, 1 A NPN MEDIUM POWER TRANSISTORS
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Discrete Semiconductor Products
BCP55-10,115
ActiveNexperia USA Inc.
60 V, 1 A NPN MEDIUM POWER TRANSISTORS
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BCP55-10,115 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 1 A |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 63 |
| Frequency - Transition | 180 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Power - Max [Max] | 1.35 W |
| Supplier Device Package | SOT-223 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 500 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 1251 | $ 0.47 | |
Description
General part information
BCP55-10 Series
NPN medium power transistor series in a small SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
Documents
Technical documentation and resources