Discrete Semiconductor Products

PSMN6R9-100YSFX

Obsolete

MOSFET N-CH 100V 100A LFPAK56

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 100A LFPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN6R9-100YSFX

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	50.3 nC
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max) [Max]	238 W
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Vgs (Max)	Technology	Package / Case	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature	FET Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package
Freescale Semiconductor - NXP PSMN6R9-100YSFX	20 V	MOSFET (Metal Oxide)	SC-100 SOT-669	238 W	50.3 nC	10 V	Surface Mount	100 V	175 °C	N-Channel	100 A	LFPAK56 Power-SO8

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 100A (Tc) 238W Surface Mount LFPAK56, Power-SO8

Technical documentation and resources