Discrete Semiconductor Products

PSMN6R9-100YSFX

Obsolete

MOSFET N-CH 100V 100A LFPAK56

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 100A LFPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN6R9-100YSFX

Current - Continuous Drain (Id) (Tc)	100 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	50.3 nC
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	SOT-669, SC-100
Package Name	LFPAK56, Power-SO8
Power Dissipation (Max)	238 W
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Operating Temperature	Technology	Mounting Type	FET Type	Package / Case	Current - Continuous Drain (Id) (Tc)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Package Name	Vgs (Max)
Nexperia USA Inc. PSMN6R9-100YSFX	175 °C	MOSFET (Metal Oxide)	Surface Mount	N-Channel	SC-100 SOT-669	100 A	10 V	238 W	50.3 nC	100 V	LFPAK56 Power-SO8	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	Cut Tape (CT)	1	$ 2.74	1m+
		10	$ 2.30
		100	$ 1.86
		500	$ 1.66
	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 100 V 100A (Tc) 238W Surface Mount LFPAK56, Power-SO8

Technical documentation and resources