MCQ4407B-TP

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MOSFET P-CH 30V 12A 8SOP

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Discrete Semiconductor Products

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MOSFET P-CH 30V 12A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	MCQ4407B-TP

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	20 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	29.8 nC
Input Capacitance (Ciss) (Max) @ Vds	2050 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	3.2 W
Rds On (Max) @ Id, Vgs	10.5 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	2.8 V

Part	Power Dissipation (Max)	Package / Case	Package / Case [y]	Package / Case [x]	Mounting Type	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Technology	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Vgs (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id
Micro Commercial Components MCQ4407B-TP	3.2 W	8-SOIC	3.9 mm	0.154 in	Surface Mount	P-Channel	2050 pF	4.5 V 20 V	30 V	12 A	MOSFET (Metal Oxide)	29.8 nC	-55 °C	150 °C	8-SOP	25 V	10.5 mOhm	2.8 V

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General part information

P-Channel 30 V 12A (Ta) 3.2W (Tj) Surface Mount 8-SOP

Technical documentation and resources