Discrete Semiconductor Products

VS-65APF06LHM3

Active

DIODE GEN PURP 600V 65A TO247AD

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

DIODE GEN PURP 600V 65A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	VS-65APF06LHM3

Current - Average Rectified (Io)	65 A
Current - Reverse Leakage @ Vr	100 µA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	SC-65-3, TO-3P-3
Qualification	AEC-Q101
Reverse Recovery Time (trr)	180 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-247AD (TO-3P)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.32 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Package / Case	Current - Average Rectified (Io)	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Speed	Qualification	Grade
Vishay General Semiconductor - Diodes Division VS-65APF06L-M3	150 °C	-40 °C	180 ns	TO-247-3	65 A	TO-247AD	600 V	Standard	100 µA	1.32 V	Through Hole	200 mA 500 ns
Vishay General Semiconductor - Diodes Division VS-65APF06LHM3	150 °C	-40 °C	180 ns	SC-65-3 TO-3P-3	65 A	TO-247AD (TO-3P)	600 V	Standard	100 µA	1.32 V	Through Hole	200 mA 500 ns	AEC-Q101	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 65A Through Hole TO-247AD (TO-3P)

Technical documentation and resources