Discrete Semiconductor Products
RF6C055BCTCR
ActiveRohm Semiconductor
PCH -20V -5.5A MIDDLE POWER MOSFET
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Discrete Semiconductor Products
RF6C055BCTCR
ActiveRohm Semiconductor
PCH -20V -5.5A MIDDLE POWER MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RF6C055BCTCR |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5.5 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 15.2 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1080 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6-SMD, Flat Leads |
| Power Dissipation (Max) [Max] | 1 W |
| Rds On (Max) @ Id, Vgs | 25.8 mOhm |
| Supplier Device Package | TUMT6 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) [Max] | 8 V |
| Vgs(th) (Max) @ Id | 1.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 2523 | $ 1.10 | |
Description
General part information
RF6C055BC Series
RF6C055BC is Low on-resistance and high power small mold package MOSFET for switching.
Documents
Technical documentation and resources