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SOT 23
Discrete Semiconductor Products

BC817-25-13P

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SOT 23
Discrete Semiconductor Products

BC817-25-13P

Active

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBC817-25-13P
Current - Collector (Ic) (Max) [Max]500 mA
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]160
Frequency - Transition100 MHz
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Supplier Device PackageSOT-23
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic700 mV
Voltage - Collector Emitter Breakdown (Max)45 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 10000$ 0.03

Description

General part information

BC817 Series

Bipolar (BJT) Transistor NPN 45 V 500 mA 100MHz 300 mW Surface Mount SOT-23

Documents

Technical documentation and resources

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