Specification	NTD4302

Current - Continuous Drain (Id) @ 25°C	8.4 A, 68 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	80 nC
Input Capacitance (Ciss) (Max) @ Vds	2400 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	75 W, 1.04 W
Rds On (Max) @ Id, Vgs	10 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

NTD4302 Series

Single N-Channel Power MOSFET 30V, 18.5A, 10mΩ

Part	Technology	Drain to Source Voltage (Vdss)	Vgs (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Package / Case	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Mounting Type	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor NTD4302T4G	MOSFET (Metal Oxide)	30 V	20 V	N-Channel	4.5 V 10 V	80 nC	DPAK	DPAK (2 Leads + Tab) SC-63 TO-252-3	3 V	-55 °C	150 °C	10 mOhm	Surface Mount	1.04 W 75 W	8.4 A 68 A	2400 pF
ON Semiconductor NTD4302T4	MOSFET (Metal Oxide)	30 V	20 V	N-Channel	4.5 V 10 V	80 nC	DPAK	DPAK (2 Leads + Tab) SC-63 TO-252-3	3 V	-55 °C	150 °C	10 mOhm	Surface Mount	1.04 W 75 W	8.4 A 68 A	2400 pF
ON Semiconductor NTD4302	MOSFET (Metal Oxide)	30 V	20 V	N-Channel	4.5 V 10 V	80 nC	DPAK	DPAK (2 Leads + Tab) SC-63 TO-252-3	3 V	-55 °C	150 °C	10 mOhm	Surface Mount	1.04 W 75 W	8.4 A 68 A	2400 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Power MOSFET68 A, 30 V, N−Channel DPAK/IPAK

Technical documentation and resources