Discrete Semiconductor Products

PHX18NQ11T,127

Obsolete

MOSFET N-CH 110V 12.5A TO220F

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 110V 12.5A TO220F

Technical Specifications

Parameters and characteristics for this part

Specification	PHX18NQ11T,127

Current - Continuous Drain (Id) @ 25°C	12.5 A
Drain to Source Voltage (Vdss)	110 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	21 nC
Input Capacitance (Ciss) (Max) @ Vds	635 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Power Dissipation (Max) [Max]	31.2 W
Rds On (Max) @ Id, Vgs [Max]	90 mOhm
Supplier Device Package	TO-220F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Technology	Power Dissipation (Max) [Max]	Vgs (Max)	Mounting Type	FET Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs
Freescale Semiconductor - NXP PHX18NQ11T,127	TO-220F	21 nC	-55 °C	150 °C	12.5 A	110 V	635 pF	90 mOhm	MOSFET (Metal Oxide)	31.2 W	20 V	Through Hole	N-Channel	TO-220-3 Full Pack Isolated Tab	10 V
Freescale Semiconductor - NXP PHX18NQ20T,127	TO-220F	40 nC	-55 °C	150 °C	8.2 A	200 V	1850 pF		MOSFET (Metal Oxide)		20 V	Through Hole	N-Channel	TO-220-3 Full Pack Isolated Tab	10 V	180 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 110 V 12.5A (Tc) 31.2W (Tc) Through Hole TO-220F

Technical documentation and resources