Discrete Semiconductor Products

PHX18NQ11T,127

Obsolete

MOSFET N-CH 110V 12.5A TO220F

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 110V 12.5A TO220F

Technical Specifications

Parameters and characteristics for this part

Specification	PHX18NQ11T,127

Current - Continuous Drain (Id) (Tc)	12.5 A
Drain to Source Voltage (Vdss)	110 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	21 nC
Input Capacitance (Ciss) (Max)	635 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Package Name	TO-220F
Power Dissipation (Max)	31.2 W
Rds On (Max)	90 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Current - Continuous Drain (Id) (Tc)	Package / Case	FET Type	Package Name	Power Dissipation (Max)	Vgs (Max)	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)	Gate Charge (Max)	Rds On (Max)	Mounting Type
NXP USA Inc. PHX18NQ11T,127	10 V	110 V	-55 °C	150 °C	MOSFET (Metal Oxide)	12.5 A	Isolated Tab TO-220-3 Full Pack	N-Channel	TO-220F	31.2 W	20 V	635 pF	4 V	21 nC	90 mOhm	Through Hole
NXP USA Inc. PHX18NQ20T,127	10 V	200 V	-55 °C	150 °C	MOSFET (Metal Oxide)	8.2 A	Isolated Tab TO-220-3 Full Pack	N-Channel	TO-220F	30 W	20 V	1850 pF 1850 pF	4 V	40 nC	180 mOhm	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 110 V 12.5A (Tc) 31.2W (Tc) Through Hole TO-220F

Technical documentation and resources