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Pkg 5847
Discrete Semiconductor Products

SIE800DF-T1-E3

Obsolete
Vishay Dale

MOSFET N-CH 30V 50A 10POLARPAK

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Pkg 5847
Discrete Semiconductor Products

SIE800DF-T1-E3

Obsolete
Vishay Dale

MOSFET N-CH 30V 50A 10POLARPAK

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSIE800DF-T1-E3
Current - Continuous Drain (Id) (Tc)50 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)35 nC
Input Capacitance (Ciss) (Max)1600 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case10-PolarPAK® (S)
Package Name10-PolarPAK® (S)
Power Dissipation (Max)5.2 W, 104 W
Rds On (Max)7.2 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3 V
PartVgs (Max)Package NameDrain to Source Voltage (Vdss)Input Capacitance (Ciss) (Max)Power Dissipation (Max)Operating Temperature (Min)Operating Temperature (Max)Mounting TypeTechnologyFET TypeVgs(th) (Max)Current - Continuous Drain (Id) (Tc)Package / CaseGate Charge (Max)Rds On (Max)Drive Voltage (Min Rds On)Drive Voltage (Max Rds On)
Pkg 5847
Vishay Dale
20 V
10-PolarPAK® (S)
30 V
1600 pF
5.2 W
104 W
-55 °C
150 °C
Surface Mount
MOSFET (Metal Oxide)
N-Channel
3 V
50 A
10-PolarPAK® (S)
35 nC
7.2 mOhm
10 V
4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyN/A 0$ 0.001m+

CAD

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Description

General part information

SIE800 Series

N-Channel 30 V 50A (Tc) 5.2W (Ta), 104W (Tc) Surface Mount 10-PolarPAK® (S)

Documents

Technical documentation and resources