Discrete Semiconductor Products

SIE800DF-T1-E3

Obsolete

MOSFET N-CH 30V 50A 10POLARPAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 50A 10POLARPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIE800DF-T1-E3

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	35 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	10-PolarPAK® (S)
Power Dissipation (Max)	104 W, 5.2 W
Rds On (Max) @ Id, Vgs [Max]	7.2 mOhm
Supplier Device Package	10-PolarPAK® (S)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Power Dissipation (Max)	Vgs (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Vgs(th) (Max) @ Id	Technology	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]
Vishay General Semiconductor - Diodes Division SIE800DF-T1-E3	50 A	10-PolarPAK® (S)	5.2 W 104 W	20 V	10-PolarPAK® (S)	35 nC	Surface Mount	3 V	MOSFET (Metal Oxide)	N-Channel	4.5 V 10 V	-55 °C	150 °C	1600 pF	30 V	7.2 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 50A (Tc) 5.2W (Ta), 104W (Tc) Surface Mount 10-PolarPAK® (S)

Technical documentation and resources