Discrete Semiconductor Products

AS3D020120P2

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DIODE ARR SIC 1200V 30A TO247-3

Discrete Semiconductor Products

Active

DIODE ARR SIC 1200V 30A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	AS3D020120P2

Current - Average Rectified (Io) (per Diode)	30 A
Current - Reverse Leakage	20 µA
Diode Configuration	Common Cathode
Diode Pair Count	1 pair
Mounting Type	Through Hole
Operating Temperature - Junction (Max)	175 °C
Operating Temperature - Junction (Min)	-55 °C
Package / Case	TO-247-3
Package Name	TO-247-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Speed - Fast Recovery (Minimum)	500 mA
Speed - Recovery Current	500 mA, 500 mA
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	1200 V
Voltage - Forward (Vf) (Max)	1.8 V

Part	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Reverse Recovery Time (trr)	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Current - Reverse Leakage	Technology	Diode Pair Count	Diode Configuration	Voltage - Forward (Vf) (Max)	Package Name	Mounting Type	Package / Case	Current - Average Rectified (Io) (per Diode)	Voltage - DC Reverse (Vr) (Max)
ANBON SEMICONDUCTOR (INT'L) LIMITED AS3D020120P2	500 mA	No Recovery Time	500 mA 500 mA	0 ns	175 °C	-55 °C	20 µA	SiC (Silicon Carbide) Schottky	1 pair	Common Cathode	1.8 V	TO-247-3	Through Hole	TO-247-3	30 A	1200 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

Diode Array 1 Pair Common Cathode 1200 V 30A (DC) Through Hole TO-247-3

Technical documentation and resources