Discrete Semiconductor Products

MC5616

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DIODE GP 3KV 570MA S AXIAL

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Discrete Semiconductor Products

Active

DIODE GP 3KV 570MA S AXIAL

Technical Specifications

Parameters and characteristics for this part

Specification	MC5616

Current - Reverse Leakage @ Vr	1 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	S, Axial
Reverse Recovery Time (trr)	300 ns
Speed	500 ns, 200 mA
Supplier Device Package	S, Axial
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	3000 V
Voltage - Forward (Vf) (Max) @ If [Max]	6 V

Part	Current - Reverse Leakage @ Vr	Package / Case	Reverse Recovery Time (trr)	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Technology	Speed
Microsemi Corporation MC5616	1 µA	S Axial	300 ns	S Axial	3000 V	6 V	150 °C	-65 C	Through Hole	Standard	200 mA 500 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Diode 3000 V 570mA Through Hole S, Axial

Technical documentation and resources

No documents available