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Discrete Semiconductor Products
AFGH4L25T120RWD
ActiveON Semiconductor
IGBT - AUTOMOTIVE GRADE 1200 V 25 A
Deep-Dive with AI
Search across all available documentation for this part.
Discrete Semiconductor Products
AFGH4L25T120RWD
ActiveON Semiconductor
IGBT - AUTOMOTIVE GRADE 1200 V 25 A
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | AFGH4L25T120RWD |
|---|---|
| null | |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 9.51 | |
| 10 | $ 6.53 | |||
| 100 | $ 4.83 | |||
| 500 | $ 4.27 | |||
| ON Semiconductor | N/A | 1 | $ 4.55 | |
Description
General part information
AFGH4L25T120RWD Series
AEC Q101 qualified Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop VII Trench construction. Provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss offers optimum performance for both hard and soft switching topology in automotive application.
Documents
Technical documentation and resources