Discrete Semiconductor Products

RSQ035P03TR

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MOSFET P-CH 30V 3.5A TSMT6

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Discrete Semiconductor Products

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MOSFET P-CH 30V 3.5A TSMT6

Technical Specifications

Parameters and characteristics for this part

Specification	RSQ035P03TR

Current - Continuous Drain (Id) @ 25°C	3.5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	9.2 nC
Input Capacitance (Ciss) (Max) @ Vds	780 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-6 Thin, TSOT-23-6
Power Dissipation (Max) [Max]	1.25 W
Rds On (Max) @ Id, Vgs [Max]	65 mOhm
Supplier Device Package	TSMT6 (SC-95)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Rds On (Max) @ Id, Vgs [Max]	FET Type	Vgs (Max)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Power Dissipation (Max) [Max]	Technology	Mounting Type	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Drain to Source Voltage (Vdss)
Rohm Semiconductor RSQ035P03TR	65 mOhm	P-Channel	20 V	2.5 V	9.2 nC	TSMT6 (SC-95)	1.25 W	MOSFET (Metal Oxide)	Surface Mount	150 °C	3.5 A	4 V	10 V	780 pF	SOT-23-6 Thin TSOT-23-6	30 V

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General part information

P-Channel 30 V 3.5A (Ta) 1.25W (Ta) Surface Mount TSMT6 (SC-95)

Technical documentation and resources