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MJF47G
Discrete Semiconductor Products

NTPF600N80S3Z

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ON Semiconductor

MOSFET – POWER, N-CHANNEL, SUPERFET® III, 800 V, 8 A, 600 MΩ, TO-220F

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MJF47G
Discrete Semiconductor Products

NTPF600N80S3Z

Active
ON Semiconductor

MOSFET – POWER, N-CHANNEL, SUPERFET® III, 800 V, 8 A, 600 MΩ, TO-220F

Technical Specifications

Parameters and characteristics for this part

SpecificationNTPF600N80S3Z
Current - Continuous Drain (Id) @ 25°C8 A
Drain to Source Voltage (Vdss)800 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs15.5 nC
Input Capacitance (Ciss) (Max) @ Vds725 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max) [Max]28 W
Rds On (Max) @ Id, Vgs600 mOhm
Supplier Device PackageTO-220FP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1000$ 1.28
NewarkEach 1000$ 1.66
2500$ 1.34
5000$ 1.30
ON SemiconductorN/A 1$ 1.33

Description

General part information

NTPF600N80S3Z Series

800 V SUPERFET III MOSFET is ON Semiconductor’s high performance MOSFET family offering 800 V breakdown voltage. New 800 V SUPERFET III MOSFET which is optimized for primary switch of flyback converter, enables lower switching losses and case temperature without sacrificing EMI performance thanks to its optimized design. In addition, internal Zener Diode significantly improves ESD capability. This new family of 800 V SUPERFET III MOSFET enables to make more efficient, compact, cooler and more robust applications because of its remarkable performance in switching power applications such as Laptop adapter, Audio, Lighting, ATX power and industrial power supplies.