Specification	HGTG20N60A4

Current - Collector (Ic) (Max) [Max]	70 A
Current - Collector Pulsed (Icm)	280 A
Gate Charge	142 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	290 W
Supplier Device Package	TO-247-3
Switching Energy [custom]	150 µJ
Switching Energy [custom]	105 µJ
Td (on/off) @ 25°C	73 ns, 15 ns
Test Condition	390 V, 15 V, 3 Ohm, 20 A
Vce(on) (Max) @ Vge, Ic	2.7 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

HGTG20N60A4 Series

IGBT, 600V, SMPS

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Current - Collector Pulsed (Icm)	Operating Temperature [Min]	Operating Temperature [Max]	Test Condition	Supplier Device Package	Power - Max [Max]	Vce(on) (Max) @ Vge, Ic	Mounting Type	Td (on/off) @ 25°C	Gate Charge	Package / Case	Switching Energy [custom]	Switching Energy [custom]
ON Semiconductor HGTG20N60A4	600 V	70 A	280 A	-55 °C	150 °C	3 Ohm 15 V 20 A 390 V	TO-247-3	290 W	2.7 V	Through Hole	15 ns 73 ns	142 nC	TO-247-3	150 µJ	105 µJ

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

HGTG20N60A4 Series

The HGTG20N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS, welder and induction heating.