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TO-220-3
Discrete Semiconductor Products

NTP185N60S5H

NRND
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET® V, FAST, 600 V, 15 A, 185 MΩ, TO-220

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TO-220-3
Discrete Semiconductor Products

NTP185N60S5H

NRND
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET® V, FAST, 600 V, 15 A, 185 MΩ, TO-220

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNTP185N60S5H
Current - Continuous Drain (Id) @ 25°C15 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]25 nC
Input Capacitance (Ciss) (Max) @ Vds1350 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)116 W
Rds On (Max) @ Id, Vgs185 mOhm
Supplier Device PackageTO-220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 3.25
10$ 2.73
100$ 2.21
800$ 1.96
1600$ 1.68
2400$ 1.58
5600$ 1.52
NewarkEach 500$ 2.25
1000$ 2.02
2500$ 1.63
5000$ 1.58
ON SemiconductorN/A 1$ 1.62

Description

General part information

NTP185N60S5H Series

The SUPERFET V MOSFET is the fifth generation high voltage super−junction (SJ) MOSFET family from ON Semiconductor. SUPERFET V delivers best−in−class FOMs (RDS(ON)·QG and RDS(ON)·EOSS) to improve not only heavy load but also light load efficiency. The 600 V SUPERET V series provides design benefits through reduced conduction and switching losses, while supporting extreme MOSFET dVDS/dt ratings at 120 V/ns. Consequently, the SUPERFET V MOSFET FAST series helps maximize system efficiency and power density.

Documents

Technical documentation and resources