Discrete Semiconductor Products

RUM003N02T2L

NRND

MOSFET N-CH 20V 300MA VMT3

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Discrete Semiconductor Products

NRND

MOSFET N-CH 20V 300MA VMT3

Technical Specifications

Parameters and characteristics for this part

Specification	RUM003N02T2L

Current - Continuous Drain (Id) @ 25°C	300 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4 V, 1.8 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	25 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-723
Power Dissipation (Max) [Max]	150 mW
Rds On (Max) @ Id, Vgs	1 Ohm
Supplier Device Package	VMT3
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	8 V
Vgs(th) (Max) @ Id	1 V

Part	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Technology	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs (Max) [Max]	Power Dissipation (Max) [Max]	FET Type	Vgs(th) (Max) @ Id	Supplier Device Package	Rds On (Max) @ Id, Vgs	Mounting Type
Rohm Semiconductor RUM003N02T2L	150 °C	1.8 V 4 V	SOT-723	25 pF	MOSFET (Metal Oxide)	300 mA	20 V	8 V	150 mW	N-Channel	1 V	VMT3	1 Ohm	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 20 V 300mA (Ta) 150mW (Ta) Surface Mount VMT3

Technical documentation and resources