Discrete Semiconductor Products

SMUN2112T1

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SMALL SIGNAL BIPOLAR TRANSISTOR

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Discrete Semiconductor Products

Active

SMALL SIGNAL BIPOLAR TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	SMUN2112T1

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Part	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Resistor - Emitter Base (R2)	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Package / Case	Current - Collector (Ic) (Max) [Max]	Resistor - Base (R1)	Mounting Type
ON Semiconductor SMUN2112T1
ON Semiconductor MUN2112T1	500 nA	230 mW	50 V	22 kOhms	PNP - Pre-Biased	60 hFE	SC-59	250 mV	SC-59 SOT-23-3 TO-236-3	100 mA	22 kOhms	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	11539	$ 0.03

General part information

Pre-Biased Bipolar Transistor (BJT)

Technical documentation and resources

No documents available