Specification	NTP6412ANG

Current - Continuous Drain (Id) @ 25°C	58 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	100 nC
Input Capacitance (Ciss) (Max) @ Vds	3500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	167 W
Rds On (Max) @ Id, Vgs	18.2 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

NTP6412AN Series

Single N-Channel Power MOSFET 100V, 58A, 18.2mΩ

Part	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Vgs (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Rds On (Max) @ Id, Vgs	Supplier Device Package	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor NTP6412ANG	N-Channel	10 V	TO-220-3	100 nC	4 V	20 V	100 V	3500 pF	MOSFET (Metal Oxide)	18.2 mOhm	TO-220	167 W	-55 °C	175 ░C	Through Hole	58 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This is a 100 V N-Channel Power MOSFET.

Technical documentation and resources