Discrete Semiconductor Products

SIHG155N60EF-GE3

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EF SERIES POWER MOSFET WITH FAST

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Discrete Semiconductor Products

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EF SERIES POWER MOSFET WITH FAST

Technical Specifications

Parameters and characteristics for this part

Specification	SIHG155N60EF-GE3

Current - Continuous Drain (Id) @ 25°C	21 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	38 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1465 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	179 W
Rds On (Max) @ Id, Vgs	149 mOhm
Supplier Device Package	TO-247AC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Part	FET Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Package / Case	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Power Dissipation (Max) [Max]	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]
Vishay General Semiconductor - Diodes Division SIHG155N60EF-GE3	N-Channel	5 V	21 A	TO-247-3	Through Hole	1465 pF	10 V	TO-247AC	179 W	MOSFET (Metal Oxide)	-55 °C	150 °C	20 V	600 V	149 mOhm	38 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 21A (Tc) 179W (Tc) Through Hole TO-247AC

Technical documentation and resources