Discrete Semiconductor Products

BUK6Y24-40PX

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BUK6Y24-40P - 40 V, P-CHANNEL TRENCH MOSFET@EN-US SOIC 4-PIN

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Discrete Semiconductor Products

Active

BUK6Y24-40P - 40 V, P-CHANNEL TRENCH MOSFET@EN-US SOIC 4-PIN

Technical Specifications

Parameters and characteristics for this part

Specification	BUK6Y24-40PX

Current - Continuous Drain (Id) @ 25°C	39 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	35 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	1250 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max)	66 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	24 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Current - Continuous Drain (Id) @ 25°C	FET Type	Technology	Drain to Source Voltage (Vdss)	Supplier Device Package	Qualification	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Grade	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]
Freescale Semiconductor - NXP BUK6Y24-40PX	39 A	P-Channel	MOSFET (Metal Oxide)	40 V	LFPAK56 Power-SO8	AEC-Q101	66 W	-55 °C	175 ░C	Automotive	35 nC	Surface Mount	20 V	4.5 V 10 V	SC-100 SOT-669	24 mOhm	3 V	1250 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 40 V 39A (Tc) 66W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources