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ONSEMI H11G2M
Isolators

H11G2M

Active
ON Semiconductor

OPTOCOUPLER, 1 CHANNEL, DIP, 6 PINS, 60 MA, 7.5 KV, 500 %

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ONSEMI H11G2M
Isolators

H11G2M

Active
ON Semiconductor

OPTOCOUPLER, 1 CHANNEL, DIP, 6 PINS, 60 MA, 7.5 KV, 500 %

Technical Specifications

Parameters and characteristics for this part

SpecificationH11G2M
Current - DC Forward (If) (Max) [Max]60 mA
Current Transfer Ratio (Min) [Min]1000 %
Input TypeDC
Mounting TypeThrough Hole
Number of Channels1
Operating Temperature [Max]100 °C
Operating Temperature [Min]-40 °C
Output TypeDarlington with Base
Package / Case6-DIP
Package / Case0.3 in
Package / Case7.62 mm
Supplier Device Package6-DIP
Turn On / Turn Off Time (Typ)5 µs, 100 µs
Vce Saturation (Max) [Max]1 V
Voltage - Forward (Vf) (Typ)1.3 V
Voltage - Isolation4170 Vrms

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 0.97
50$ 0.63
100$ 0.41
1000$ 0.33
2000$ 0.31
5000$ 0.29
10000$ 0.29
25000$ 0.28
NewarkEach 1$ 0.98
10$ 0.74
100$ 0.50
500$ 0.42
1000$ 0.40
3000$ 0.38
10000$ 0.34
ON SemiconductorN/A 1$ 0.29

Description

General part information

H11G2M Series

The H11G1M and H11G2M are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics.