Discrete Semiconductor Products

2SC18470Q

Obsolete

TRANS NPN 40V 1.5A TO126B-A1

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Discrete Semiconductor Products

Obsolete

TRANS NPN 40V 1.5A TO126B-A1

Technical Specifications

Parameters and characteristics for this part

Specification	2SC18470Q

Current - Collector (Ic) (Max) [Max]	1.5 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	150 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	1.2 W
Supplier Device Package	TO-126B-A1
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	40 V

Part	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Operating Temperature	Transistor Type	Mounting Type	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Package / Case	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]
Panasonic Electronic Components 2SC18470Q	1 V	100 µA	80	TO-126B-A1	150 °C	NPN	Through Hole	1.5 A	150 MHz	TO-126-3 TO-225AA	1.2 W	40 V
Panasonic Electronic Components 2SC18460S	500 mV	100 µA	170	TO-126B-A1	150 °C	NPN	Through Hole	1 A	200 MHz	TO-126-3 TO-225AA	5 W	35 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Bipolar (BJT) Transistor NPN 40 V 1.5 A 150MHz 1.2 W Through Hole TO-126B-A1

Technical documentation and resources