Discrete Semiconductor Products

2SK3826

Obsolete

MOSFET N-CH 100V 26A TO220

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 26A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	2SK3826

Current - Continuous Drain (Id) @ 25°C	26 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	42 nC
Input Capacitance (Ciss) (Max) @ Vds	2150 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max)	45 W, 1.75 W
Rds On (Max) @ Id, Vgs	60 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.6 V

Part	Package / Case	Technology	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	FET Type	Mounting Type	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Power Dissipation (Max)
ON Semiconductor 2SK3826	TO-220-3	MOSFET (Metal Oxide)	100 V	60 mOhm	20 V	2.6 V	26 A	N-Channel	Through Hole	150 °C	4 V	10 V	42 nC	2150 pF	TO-220	1.75 W 45 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 26A (Ta) 1.75W (Ta), 45W (Tc) Through Hole TO-220

Technical documentation and resources