Discrete Semiconductor Products

FESE8FT-E3/45

Obsolete

DIODE GEN PURP 300V 8A TO220AC

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Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 300V 8A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	FESE8FT-E3/45

Capacitance @ Vr, F	85 pF
Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	50 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	300 V
Voltage - Forward (Vf) (Max) @ If	1.3 V

Part	Capacitance @ Vr, F	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Package / Case	Speed	Current - Average Rectified (Io)	Technology	Mounting Type	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)
Vishay General Semiconductor - Diodes Division FESE8FT-E3/45	85 pF	TO-220AC	300 V	1.3 V	TO-220-2	200 mA 500 ns	8 A	Standard	Through Hole	10 µA	150 °C	-55 °C	50 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 300 V 8A Through Hole TO-220AC

Technical documentation and resources