Discrete Semiconductor Products

SI8424CDB-T1-E1

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MOSFET N-CH 8V 4MICROFOOT

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Discrete Semiconductor Products

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MOSFET N-CH 8V 4MICROFOOT

Technical Specifications

Parameters and characteristics for this part

Specification	SI8424CDB-T1-E1

Current - Continuous Drain (Id) @ 25°C	6.3 A
Drain to Source Voltage (Vdss)	8 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.2 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	40 nC
Input Capacitance (Ciss) (Max) @ Vds	2340 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	2.7 W, 1.1 W
Rds On (Max) @ Id, Vgs	20 mOhm
Supplier Device Package	4-Microfoot
Technology	MOSFET (Metal Oxide)
Vgs (Max)	5 V
Vgs(th) (Max) @ Id	800 mV

Part	Vgs(th) (Max) @ Id	Mounting Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Vgs (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Package / Case
Vishay General Semiconductor - Diodes Division SI8424CDB-T1-E1	800 mV	Surface Mount	20 mOhm	4-Microfoot	N-Channel	2340 pF	40 nC	8 V	1.2 V 4.5 V	-55 °C	150 °C	MOSFET (Metal Oxide)	5 V	1.1 W 2.7 W	6.3 A
Vishay General Semiconductor - Diodes Division SI8424DB-T1-E1	1 V	Surface Mount		4-Microfoot	N-Channel	1950 pF	33 nC	8 V	1.2 V 4.5 V	-55 °C	150 °C	MOSFET (Metal Oxide)	5 V	2.78 W 6.25 W	12.2 A	31 mOhm	4-XFBGA CSPBGA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 8 V 6.3A (Ta) 1.1W (Ta), 2.7W (Tc) Surface Mount 4-Microfoot

Technical documentation and resources