Discrete Semiconductor Products

FDBL86361-F085AW

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MOSFET N-CH 80V 300A 8HPSOF

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Discrete Semiconductor Products

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MOSFET N-CH 80V 300A 8HPSOF

Technical Specifications

Parameters and characteristics for this part

Specification	FDBL86361-F085AW

Current - Continuous Drain (Id) @ 25°C	300 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	188 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	12800 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerSFN
Power Dissipation (Max) [Max]	429 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	1.4 mOhm
Supplier Device Package	8-HPSOF
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

N-Channel PowerTrench<sup>®</sup> MOSFET, 80V, 300A, 1.4mΩ

Part	Package / Case	Qualification	Drain to Source Voltage (Vdss)	FET Type	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Technology	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Grade	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FDBL86361-F085AW	8-PowerSFN	AEC-Q101	80 V	N-Channel	Surface Mount	12800 pF	429 W	MOSFET (Metal Oxide)	1.4 mOhm	4 V	Automotive	300 A	20 V	10 V	8-HPSOF	188 nC	-55 °C	175 ░C
ON Semiconductor FDBL86361-F085	8-PowerSFN	AEC-Q101	80 V	N-Channel	Surface Mount		429 W	MOSFET (Metal Oxide)	1.4 mOhm	4 V	Automotive	300 A	20 V	10 V	8-HPSOF	188 nC	-55 °C	175 ░C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel PowerTrench®MOSFET, 80V, 300A, 1.4mΩ

Technical documentation and resources

No documents available