Discrete Semiconductor Products

NTJS4160NT1G

Obsolete

SMALL SIGNAL MOSFET 30V 3.2A 60 MOHM SINGLE N-CHANNEL SC−88/SC70−6/SOT−363

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

SMALL SIGNAL MOSFET 30V 3.2A 60 MOHM SINGLE N-CHANNEL SC−88/SC70−6/SOT−363

Technical Specifications

Parameters and characteristics for this part

Specification	NTJS4160NT1G

Current - Continuous Drain (Id) @ 25°C	1.8 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	2.75 nC
Input Capacitance (Ciss) (Max) @ Vds	230 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power Dissipation (Max) [Max]	300 mW
Rds On (Max) @ Id, Vgs	60 mOhm
Supplier Device Package	SC70-6, SC-88, SOT-363
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.4 V

Small Signal MOSFET 30V 3.2A 60 mOhm Single N-Channel SC−88/SC70−6/SOT−363

Part	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Technology	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Mounting Type
ON Semiconductor NTJS4160NT1G	2.4 V	300 mW	4.5 V 10 V	N-Channel	1.8 A	-55 °C	150 °C	20 V	30 V	MOSFET (Metal Oxide)	6-TSSOP SC-88 SOT-363	230 pF	SC-88 SC70-6 SOT-363	60 mOhm	2.75 nC	Surface Mount
ON Semiconductor NTJS4151PT1

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Power MOSFET 30 V, 3.2 A, Single N-Channel SC-88

Technical documentation and resources