Discrete Semiconductor Products

NTTFS5811NLTWG

Obsolete

ON Semiconductor

SINGLE N-CHANNEL POWER MOSFET 40V, 40A, 6.7MΩ

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Discrete Semiconductor Products

NTTFS5811NLTWG

Obsolete

ON Semiconductor

SINGLE N-CHANNEL POWER MOSFET 40V, 40A, 6.7MΩ

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NTTFS5811NLTWG

Current - Continuous Drain (Id) @ 25°C	53 A, 17 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	31 nC
Input Capacitance (Ciss) (Max) @ Vds	1570 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max)	33 W, 2.7 W
Rds On (Max) @ Id, Vgs [Max]	6.4 mOhm
Supplier Device Package	8-WDFN (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.2 V

NTTFS5C466NL Series

Power MOSFET 60V, 70A, 6.5 mOhm, Single N-Channel, u8FL, Logic Level

Part	Vgs(th) (Max) @ Id [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Technology	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Vgs (Max)	FET Type	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C [Max]
ON Semiconductor NTTFS5811NLTWG	2.2 V	8-PowerWDFN	17 A 53 A	MOSFET (Metal Oxide)	1570 pF	4.5 V 10 V	6.4 mOhm	8-WDFN (3.3x3.3)	Surface Mount	-55 °C	150 °C	31 nC	40 V	20 V	N-Channel	2.7 W 33 W
ON Semiconductor NTTFS5CS70NLTAG		8-PowerWDFN						8-WDFN (3.3x3.3)	Surface Mount
ON Semiconductor NTTFS5C454NLTAG		8-PowerWDFN	20 A 85 A	MOSFET (Metal Oxide)	1600 pF	4.5 V 10 V		8-WDFN (3.3x3.3)	Surface Mount	-55 °C	175 ░C		40 V	20 V	N-Channel	3.2 W 55 W	2 V	3.8 mOhm	18 nC
ON Semiconductor NTTFS5C680NLTAG		8-PowerWDFN	7.82 A 20 A	MOSFET (Metal Oxide)	327 pF	4.5 V 10 V		8-WDFN (3.3x3.3)	Surface Mount	-55 °C	175 ░C	6 nC	60 V	20 V	N-Channel	3 W 20 W	2.2 V	26.5 mOhm
ON Semiconductor NTTFS5C460NLTAG		8-PowerWDFN						8-WDFN (3.3x3.3)	Surface Mount	-55 °C	175 ░C				N-Channel		2 V	4.8 mOhm		19 A 74 A
ON Semiconductor NTTFS5C466NLTAG	2.2 V	8-PowerWDFN	14 A 51 A					8-WDFN (3.3x3.3)	Surface Mount	-55 °C	175 ░C				N-Channel			7.3 mOhm
ON Semiconductor NTTFS5C454NLTWG		8-PowerWDFN	20 A 85 A	MOSFET (Metal Oxide)	1600 pF	4.5 V 10 V		8-WDFN (3.3x3.3)	Surface Mount	-55 °C	175 ░C		40 V	20 V	N-Channel	3.2 W 55 W	2 V	3.8 mOhm	18 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NTTFS5C466NL Series

Industrial Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

NTTFS5811NLTWG

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NTTFS5811NLTWG

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Technical Specifications

NTTFS5C466NL Series

Pricing

Description

NTTFS5C466NL Series

Documents

Datasheet

Datasheet

Package Drawing-511AB-WDFN8 3.3x3.3, 0.65P

NTTFS5C466NL Series