VS-GB150TH120N

Obsolete

IGBT MOD 1200V 300A INT-A-PAK

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Discrete Semiconductor Products

Obsolete

IGBT MOD 1200V 300A INT-A-PAK

Technical Specifications

Parameters and characteristics for this part

Specification	VS-GB150TH120N

Configuration	Half Bridge
Current - Collector Cutoff (Max) [Max]	5 mA
Input	Standard
Input Capacitance (Cies) @ Vce	11 nF
Mounting Type	Chassis Mount
NTC Thermistor	False
Operating Temperature	150 °C
Package / Case	Double INT-A-PAK (3 + 4)
Power - Max [Max]	1008 W
Supplier Device Package	Double INT-A-PAK
Vce(on) (Max) @ Vge, Ic	2.35 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Power - Max [Max]	Vce(on) (Max) @ Vge, Ic	Input	Mounting Type	NTC Thermistor	Input Capacitance (Cies) @ Vce	Package / Case	Operating Temperature	Configuration	IGBT Type	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division VS-GB150TH120N	1200 V	5 mA	Double INT-A-PAK	1008 W	2.35 V	Standard	Chassis Mount		11 nF	Double INT-A-PAK (3 + 4)	150 °C	Half Bridge
Vishay General Semiconductor - Diodes Division VS-GB150YG120NT	1200 V	120 µA	ECONO3 4PACK	892 W	4 V	Standard	Chassis Mount			Module		Full Bridge	NPT	182 A	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT Module Half Bridge 1200 V 300 A 1008 W Chassis Mount Double INT-A-PAK

Technical documentation and resources

No documents available