Discrete Semiconductor Products

SQ4917EY-T1_BE3

Obsolete

MOSFET 2P-CH 60V 8A 8SOIC

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Discrete Semiconductor Products

Obsolete

MOSFET 2P-CH 60V 8A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	SQ4917EY-T1_BE3

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs [Max]	65 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	1910 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max	5 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	48 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Power - Max	Operating Temperature [Min]	Operating Temperature [Max]	Qualification	Rds On (Max) @ Id, Vgs	Technology	Configuration	Grade	Package / Case	Package / Case [y]	Package / Case [x]	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division SQ4917EY-T1_BE3	8 A	Surface Mount	65 nC	1910 pF	8-SOIC	60 V	5 W	-55 °C	175 ░C	AEC-Q101	48 mOhm	MOSFET (Metal Oxide)	2 P-Channel	Automotive	8-SOIC	3.9 mm	0.154 in	2.5 V
Vishay General Semiconductor - Diodes Division SQ4917CEY-T1_GE3	8 A	Surface Mount	65 nC	1910 pF	8-SOIC	60 V	5 W	-55 °C	175 ░C	AEC-Q101	48 mOhm	MOSFET (Metal Oxide)	2 P-Channel	Automotive	8-SOIC	3.9 mm	0.154 in	2.5 V

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General part information

Mosfet Array 60V 8A (Tc) 5W (Tc) Surface Mount 8-SOIC

Technical documentation and resources