Discrete Semiconductor Products
BC817-16
UnknownTaiwan Semiconductor Corporation
BIPOLAR TRANSISTORS - BJT TRANSISTOR 300MW
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Discrete Semiconductor Products
BC817-16
UnknownTaiwan Semiconductor Corporation
BIPOLAR TRANSISTORS - BJT TRANSISTOR 300MW
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BC817-16 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 500 mA |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 100 |
| Frequency - Transition | 100 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Supplier Device Package | SOT-23 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 700 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 45 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
BC817-xx Series
BIPOLAR TRANSISTORS - BJT TRANSISTOR 300MW
Documents
Technical documentation and resources