Discrete Semiconductor Products

IRFP044PBF

Obsolete

MOSFET N-CH 60V 57A TO247-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V 57A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	IRFP044PBF

Current - Continuous Drain (Id) @ 25°C	57 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	95 nC
Input Capacitance (Ciss) (Max) @ Vds	2500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	180 W
Rds On (Max) @ Id, Vgs	28 mOhm
Supplier Device Package	TO-247AC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Vgs(th) (Max) @ Id	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Technology	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division IRFP044PBF	60 V	95 nC	20 V	4 V	N-Channel	-55 °C	175 ░C	TO-247-3	2500 pF	57 A	TO-247AC	180 W	10 V	Through Hole	MOSFET (Metal Oxide)	28 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 57A (Tc) 180W (Tc) Through Hole TO-247AC

Technical documentation and resources