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PG-TO247-3
Discrete Semiconductor Products

IHW30N120R3FKSA1

Obsolete
INFINEON

IGBT 1200V 60A 349W TO247-3

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PG-TO247-3
Discrete Semiconductor Products

IHW30N120R3FKSA1

Obsolete
INFINEON

IGBT 1200V 60A 349W TO247-3

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIHW30N120R3FKSA1
Current - Collector (Ic) (Max) [Max]60 A
Current - Collector Pulsed (Icm)90 A
Gate Charge263 nC
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-40 °C
Package / CaseTO-247-3
Power - Max [Max]349 W
Supplier Device PackagePG-TO247-3-1
Switching Energy1.47 mJ
Td (on/off) @ 25°C326 ns
Td (on/off) @ 25°C-
Test Condition15 V, 600 V, 30 A, 10 Ohm
Vce(on) (Max) @ Vge, Ic [Max]1.75 V
Voltage - Collector Emitter Breakdown (Max) [Max]1200 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00

Description

General part information

IHW30 Series

IGBT 1200 V 60 A 349 W Through Hole PG-TO247-3-1

Documents

Technical documentation and resources

No documents available