Discrete Semiconductor Products

IRFB7537PBF

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INFINEON

MOSFET TRANSISTOR, N CHANNEL, 173 A, 60 V, 0.00275 OHM, 10 V, 3.7 V ROHS COMPLIANT: YES

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DocumentsIR Part Numbering System Datasheet

Discrete Semiconductor Products

IRFB7537PBF

Active

INFINEON

MOSFET TRANSISTOR, N CHANNEL, 173 A, 60 V, 0.00275 OHM, 10 V, 3.7 V ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsIR Part Numbering System Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRFB7537PBF

Current - Continuous Drain (Id) @ 25°C	173 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	210 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	7020 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	230 W
Rds On (Max) @ Id, Vgs	3.3 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.7 V

IRFB7537 Series

Part	Package / Case	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs(th) (Max) @ Id	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	FET Type
INFINEON IRFB7537PBF	TO-220-3	3.3 mOhm	230 W	60 V	173 A	Through Hole	7020 pF	20 V	210 nC	6 V 10 V	MOSFET (Metal Oxide)	3.7 V	TO-220AB	175 °C	-55 °C	N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	1028	$ 2.32
	Tube	1	$ 2.45
		10	$ 1.59
		100	$ 1.09
		500	$ 0.88
		1000	$ 0.86
Newark	Each	1	$ 2.42
		10	$ 1.39
		100	$ 1.30
		500	$ 1.28
		1000	$ 1.28

Description

General part information

IRFB7537 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Documents

Technical documentation and resources