Discrete Semiconductor Products

BTS7904BATMA1

Obsolete

MOSFET N/P-CH 55V/30V 40A TO263

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Discrete Semiconductor Products

Obsolete

MOSFET N/P-CH 55V/30V 40A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	BTS7904BATMA1

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	40 A
Drain to Source Voltage (Vdss)	55 V, 30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	121 nC
Input Capacitance (Ciss) (Max) @ Vds	6100 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK, TO-263-6, TO-263BA
Power - Max	96 W, 69 W
Rds On (Max) @ Id, Vgs	11.7 mOhm
Supplier Device Package	PG-TO263-5-1
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.2 V

Part	Vgs(th) (Max) @ Id	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	FET Feature	Operating Temperature [Max]	Operating Temperature [Min]	Power - Max	Gate Charge (Qg) (Max) @ Vgs	Technology	Rds On (Max) @ Id, Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Configuration	Mounting Type
INFINEON BTS7904BATMA1	2.2 V	D2PAK TO-263-6 TO-263BA	40 A	30 V 55 V	Logic Level Gate	150 °C	-55 °C	69 W 96 W	121 nC	MOSFET (Metal Oxide)	11.7 mOhm	PG-TO263-5-1	6100 pF	N and P-Channel	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.92

General part information

Mosfet Array 55V, 30V 40A 69W, 96W Surface Mount PG-TO263-5-1

Technical documentation and resources