Discrete Semiconductor Products

VS-4ESH02-M3/87A

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DIODE GEN PURP 200V 4A TO277A

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Discrete Semiconductor Products

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DIODE GEN PURP 200V 4A TO277A

Technical Specifications

Parameters and characteristics for this part

Specification	VS-4ESH02-M3/87A

Current - Average Rectified (Io)	4 A
Current - Reverse Leakage @ Vr	2 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	3-PowerDFN, TO-277
Reverse Recovery Time (trr)	25 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-277A (SMPC)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	930 mV

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Speed	Technology	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package
Vishay General Semiconductor - Diodes Division VS-4ESH02-M3/87A	200 V	3-PowerDFN TO-277	4 A	25 ns	200 mA 500 ns	Standard	930 mV	2 µA	Surface Mount	175 ░C	-65 C	TO-277A (SMPC)
Vishay General Semiconductor - Diodes Division VS-4ESH02-M3/86A	200 V	3-PowerDFN TO-277	4 A	20 ns	200 mA 500 ns	Standard	930 mV	2 µA	Surface Mount	175 ░C	-65 C	TO-277A (SMPC)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 200 V 4A Surface Mount TO-277A (SMPC)

Technical documentation and resources