Discrete Semiconductor Products

IRFR420BTM

Obsolete

MOSFET N-CH 500V 2.3A DPAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 500V 2.3A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	IRFR420BTM

Current - Continuous Drain (Id) @ 25°C	2.3 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	18 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	610 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	2.5 W, 41 W
Rds On (Max) @ Id, Vgs	2.6 Ohm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Supplier Device Package	Mounting Type	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs
ON Semiconductor IRFR420BTM	2.3 A	500 V	30 V	-55 °C	150 °C	2.5 W 41 W	TO-252AA	Surface Mount	MOSFET (Metal Oxide)	610 pF	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	10 V	18 nC	4 V	2.6 Ohm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 2.3A (Tc) 2.5W (Ta), 41W (Tc) Surface Mount TO-252AA

Technical documentation and resources