Discrete Semiconductor Products

MCQ12N06-TP

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MOSFET N-CH 60V 12A 8SOP

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Discrete Semiconductor Products

Active

MOSFET N-CH 60V 12A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	MCQ12N06-TP

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	31 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1988 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Power Dissipation (Max) [Max]	3.1 W
Rds On (Max) @ Id, Vgs	9 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Drain to Source Voltage (Vdss)	Package / Case	Package / Case	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Technology	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	FET Type	Vgs (Max)	Vgs(th) (Max) @ Id	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]
MCC (Micro Commercial Components) MCQ12N06-TP	60 V	0.154 in	8-SOIC	3.9 mm	150 °C	-55 °C	3.1 W	9 mOhm	MOSFET (Metal Oxide)	31 nC	12 A	4.5 V 10 V	Surface Mount	N-Channel	20 V	2.5 V	8-SOP	1988 pF

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General part information

N-Channel 60 V 12A (Tj) 3.1W Surface Mount 8-SOP

Technical documentation and resources