Discrete Semiconductor Products

PJD55N03_L2_00001

Active

MOSFETS 30V N-CHANNEL ENHANCEMENT MODE MOSFET

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFETS 30V N-CHANNEL ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	PJD55N03_L2_00001

Current - Continuous Drain (Id) @ 25°C	55 A, 10.5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7.1 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	54 W, 2 W
Rds On (Max) @ Id, Vgs	9 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Technology	Vgs (Max)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Supplier Device Package	FET Type	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)
Panjit International Inc. PJD55N03_L2_00001	10.5 A 55 A	150 °C	-55 °C	30 V	MOSFET (Metal Oxide)	20 V	2.5 V	4.5 V 10 V	Surface Mount	TO-252AA	N-Channel	7.1 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	9 mOhm	2 W 54 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFETS 30V N-CHANNEL ENHANCEMENT MODE MOSFET

Technical documentation and resources

No documents available