Discrete Semiconductor Products

SI7804DN-T1-GE3

LTB

MOSFET N-CH 30V 6.5A PPAK1212-8

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Discrete Semiconductor Products

LTB

MOSFET N-CH 30V 6.5A PPAK1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7804DN-T1-GE3

Current - Continuous Drain (Id) (Ta)	6.5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	13 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8
Package Name	PowerPAK® 1212-8
Power Dissipation (Max)	1.5 W
Rds On (Max)	18.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	1.8 V

Part	FET Type	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Gate Charge (Max)	Vgs (Max)	Power Dissipation (Max)	Mounting Type	Technology	Package / Case	Drain to Source Voltage (Vdss)	Package Name	Current - Continuous Drain (Id) (Ta)	Vgs(th) (Max)
Vishay Dale SI7804DN-T1-GE3	N-Channel	18.5 mOhm	-55 °C	150 °C	10 V	4.5 V	13 nC	20 V	1.5 W	Surface Mount	MOSFET (Metal Oxide)	PowerPAK® 1212-8	30 V	PowerPAK® 1212-8	6.5 A	1.8 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.49	1m+
	Tape & Reel (TR)	3000	$ 0.50	1m+
		6000	$ 0.47
		9000	$ 0.45

3D models and CAD resources for this part

General part information

N-Channel 30 V 6.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

Technical documentation and resources