Discrete Semiconductor Products

FDMS86581

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POWER MOSFET, 60V N CHANNEL 30A, 15MΩ IN POWER 56 PACKAGE

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Discrete Semiconductor Products

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POWER MOSFET, 60V N CHANNEL 30A, 15MΩ IN POWER 56 PACKAGE

Technical Specifications

Parameters and characteristics for this part

Specification	FDMS86581

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19 nC
Input Capacitance (Ciss) (Max) @ Vds	881 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	50 W
Rds On (Max) @ Id, Vgs	15 mOhm
Supplier Device Package	8-PQFN (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Power MOSFET, 60V N Channel 30A, 15mΩ in Power 56 package

Part	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	FET Type	Mounting Type	Technology	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)
ON Semiconductor FDMS86581	19 nC	10 V	4 V	N-Channel	Surface Mount	MOSFET (Metal Oxide)	30 A	15 mOhm	8-PQFN (5x6)	-55 °C	175 ░C	50 W	60 V	8-PowerTDFN	881 pF	20 V

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General part information

Power MOSFET, 60V N Channel 30A, 15mΩ in Power 56 package

Technical documentation and resources