Discrete Semiconductor Products

1N3064

Obsolete

DIODE GEN PURP 50V 75MA DO35

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Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 50V 75MA DO35

Technical Specifications

Parameters and characteristics for this part

Specification	1N3064

Current - Average Rectified (Io)	75 mA
Current - Reverse Leakage @ Vr	100 nA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-7, Axial, DO-204AA
Reverse Recovery Time (trr)	4 ns
Speed	200 mA
Speed	Any Speed
Supplier Device Package	DO-35
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	50 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Speed	Speed	Package / Case	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Current - Reverse Leakage @ Vr	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Technology	Current - Average Rectified (Io)
Microsemi Corporation 1N3064	1 V	Through Hole	200 mA	Any Speed	Axial DO-204AA DO-7	-65 C	125 °C	100 nA	DO-35	50 V	4 ns	Standard	75 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 50 V 75mA Through Hole DO-35

Technical documentation and resources

No documents available