Discrete Semiconductor Products

2N6431 TIN/LEAD

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BIPOLAR TRANSISTORS - BJT NPN 300VCBO 300VCEO 6.0VEBO 500MA 1.8W

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Discrete Semiconductor Products

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BIPOLAR TRANSISTORS - BJT NPN 300VCBO 300VCEO 6.0VEBO 500MA 1.8W

Technical Specifications

Parameters and characteristics for this part

Specification	2N6431 TIN/LEAD

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50
Frequency - Transition	50 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	200 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-206AA, TO-18-3 Metal Can
Power - Max [Max]	1.8 W
Supplier Device Package	TO-18
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	300 V

Part	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Package / Case	Power - Max [Max]	Operating Temperature [Max]	Operating Temperature [Min]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Mounting Type	Supplier Device Package	Frequency - Transition
Central Semiconductor Corp 2N6431 TIN/LEAD	100 mA	300 V	NPN	500 mV	TO-18-3 Metal Can TO-206AA	1.8 W	200 °C	-65 °C	50	100 nA	Through Hole	TO-18	50 MHz

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 2.49
Mouser	N/A	2000	$ 2.36
		4000	$ 2.32

General part information

BIPOLAR TRANSISTORS - BJT NPN 300VCBO 300VCEO 6.0VEBO 500MA 1.8W

Technical documentation and resources