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BF621-QX
Discrete Semiconductor Products

BF621-QX

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Nexperia USA Inc.

PNP HIGH-VOLTAGE TRANSISTOR

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BF621-QX
Discrete Semiconductor Products

BF621-QX

Active
Nexperia USA Inc.

PNP HIGH-VOLTAGE TRANSISTOR

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBF621-QX
Current - Collector (Ic) (Max) [Max]50 mA
Current - Collector Cutoff (Max) [Max]10 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]50
Frequency - Transition60 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTO-243AA
Power - Max [Max]500 mW
QualificationAEC-Q101
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic800 mV
Voltage - Collector Emitter Breakdown (Max) [Max]300 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 1000$ 0.96

Description

General part information

BF621-Q Series

PNP high-voltage transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package.