Discrete Semiconductor Products

IPC218N06N3X7SA1

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MV POWER MOS

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Discrete Semiconductor Products

Active

MV POWER MOS

Technical Specifications

Parameters and characteristics for this part

Specification	IPC218N06N3X7SA1

Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Mounting Type	Surface Mount
Package / Case	Die
Supplier Device Package	Die
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4 V

Part	Technology	Vgs(th) (Max) @ Id	Package / Case	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	FET Type	Mounting Type
INFINEON IPC218N04N3X7SA1	MOSFET (Metal Oxide)	4 V	Die	Die	50 mOhm	10 V	40 V	N-Channel	Surface Mount
INFINEON IPC218N06N3X7SA1	MOSFET (Metal Oxide)	4 V	Die	Die		10 V	60 V	N-Channel	Surface Mount

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General part information

N-Channel 60 V Surface Mount Die

Technical documentation and resources