Discrete Semiconductor Products

SIS478DN-T1-GE3

Obsolete

MOSFET N-CH 30V 12A PPAK1212-8

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 12A PPAK1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIS478DN-T1-GE3

Current - Continuous Drain (Id) (Tc)	12 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	10.5 nC
Input Capacitance (Ciss) (Max)	398 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8
Package Name	PowerPAK® 1212-8
Power Dissipation (Max)	15.6 W
Rds On (Max)	20 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max)	2.5 V

Part	Package / Case	Gate Charge (Max)	Package Name	Drain to Source Voltage (Vdss)	Rds On (Max)	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)	Vgs (Max)	Mounting Type	FET Type	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	Power Dissipation (Max)	Technology	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)
Vishay Dale SIS478DN-T1-GE3	PowerPAK® 1212-8	10.5 nC	PowerPAK® 1212-8	30 V	20 mOhm	398 pF	2.5 V	25 V	Surface Mount	N-Channel	-55 °C	150 °C	12 A	15.6 W	MOSFET (Metal Oxide)	10 V	4.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 30 V 12A (Tc) 15.6W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources