Specification	PBSS4160T-QR

Current - Collector (Ic) (Max) [Max]	900 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	250
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	270 mW
Qualification	AEC-Q101
Supplier Device Package	TO-236AB
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	60 V

PBSS4160T-Q Series

60 V, 1 A NPN low VCEsat (BISS) transistor

Part	Mounting Type	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Qualification	Operating Temperature	Grade	Transistor Type	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package
Nexperia USA Inc. PBSS4160T-QR	Surface Mount	900 mA	100 nA	250 mV	SC-59 SOT-23-3 TO-236-3	60 V	AEC-Q101	150 °C	Automotive	NPN	270 mW	250	TO-236AB

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.08

General part information

NPN low VCEsattransistor in a small SOT23 plastic package. PNP complement: PBSS5160T-Q.

Technical documentation and resources